![]() ![]() At a given gate bias condition, a gradual increase in the drain bias enables a sensitive change in the interlayer resistance of ReS₂, leading to a modification of the shape of the transconductance curves, and consequently, demonstrates the conducting channel migration along the thickness of ReS₂ before the stress. Herein, we report the restricted conducting channel migration in 2D multilayer ReS₂ after a constant voltage stress of gate dielectrics is applied. However, various factors including (i) insufficient carrier density, (ii) atomically thin material thickness, and (iii) numerous oxide traps/defects considerably limit our deep understanding of the carrier transport mechanism in 2D multilayer materials. 19016-19022 ISSN: 1944-8252 Subject: electric potential difference, models, resistors Abstract: When thickness-dependent carrier mobility is coupled with Thomas–Fermi screening and interlayer resistance effects in two-dimensional (2D) multilayer materials, a conducting channel migrates from the bottom surface to the top surface under electrostatic bias conditions. Restricted Channel Migration in 2D Multilayer ReS₂ Author: Chulmin Kim, Moonsoo Sung, Soo Yeon Kim, Byung Chul Lee, Yeonsu Kim, Doyoon Kim, Yeeun Kim, Youkyung Seo, Christoforos Theodorou, Gyu-Tae Kim, Min-Kyu Joo Source: ACS applied materials & interfaces 2021 v.13 no.16 pp. ![]()
0 Comments
Leave a Reply. |
AuthorWrite something about yourself. No need to be fancy, just an overview. ArchivesCategories |